Диаметр 100 ± 0.2 мм
| Diameter |
100 ± 0.2 mm |
100 ± 0.2 mm |
100 ± 0.2 |
100 ± 0.2 |
| Type / Dopant |
P/Boron |
P/Boron |
N/Phosphorus |
Customer Specified |
| Orientation |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
Customer Specified |
| Growth Method |
Cz |
Cz |
Cz |
Cz |
| Resistivity |
10 - 30 Ω-cm |
1 - 100 Ω-cm |
1 - 100 Ω-cm |
Customer Specified |
| Thickness |
500 - 550μm |
450 - 550μm |
500 - 550μm |
Customer Specified |
| TTV |
< 10μm |
<= 10μm |
|
Customer Specified |
| TIR |
< 6μm |
|
|
|
| Front Surface |
Polished |
Polished |
Polished |
Polished |
| Back Surface |
Etched |
Polished |
Etched |
Customer Specified |
| Particle Count |
< 10 @ 0.3 |
|
|
|
| Flats |
2 SEMI Standard |
2 SEMI Standard |
2 SEMI Standard |
2 SEMI Standard |
| Edges |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Диаметр 125 ± 0.2 мм
| Diameter |
125 ± 0.2 mm |
| Type / Dopant |
P/Boron |
| Orientation |
<100> ± 1° |
| Growth Method |
Cz |
| Resistivity |
10 - 20 Ω-cm |
| Thickness |
600 - 650μm |
| TTV |
< 10μm |
| Bow / Warp |
< 40μm |
| Front Surface |
Polished |
| Back Surface |
Etched |
| Particle Count |
<= 10 @>= 0.3μm |
| Flat |
2 SEMI Standard |
| Edges |
Rounded and polished per SEMI Standard |
Диаметр 150 ± 0.2 мм
| Diameter |
150 ± 0.2 mm |
150 ± 0.2 mm |
150 ± 0.2 |
150 ± 0.2 |
| Type / Dopant |
P/Boron |
N/Phosphorus |
P/Boron |
P/Boron |
| Orientation |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
| Growth Method |
Cz |
Cz |
Cz |
Cz |
| Resistivity |
1 - 30 Ω-cm |
1 - 30 Ω-cm |
10 - 30 Ω-cm |
10 - 30 Ω-cm |
| Oxygen Content |
|
|
|
27 - 33 ppma |
| Oxygen Stacking Faults (OSF) |
|
|
|
<= 100/cm² |
| Carbon Content |
|
|
|
<= 1.0 ppma |
| Metals |
|
|
|
< 5x10E |
| Thickness |
650 - 700μm |
650 - 700μm |
660 - 690μm |
660 - 690μm |
| TTV |
< 10μm |
<= 5μm |
<= 3μm |
<= 10μm |
| Bow / Warp |
< 40μm |
< 40μm |
< 40μm |
< 40μm |
| Site Flatness (STIR) |
< 1μm |
< 1μm |
< 0.2μm |
< 4μm |
| Front Surface |
Polished |
Polished |
Polished |
Polished |
| Back Surface |
Etched |
Etched |
Etched |
Etched |
| Particle Count |
<= 30 @ >= 0.2μm |
<= 30 @ >= 0.2μm |
<= 20 @ >= 0.2μm |
<= 30 @ >= 0.2μm |
| Flats |
2 SEMI Standard |
2 SEMI Standard |
2 SEMI Standard |
2 SEMI Standard |
| Edges |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Диаметр 200 ± 0.2 мм
| Diameter |
200 ± 0.2 mm |
200 ± 0.2 mm |
200 ± 0.2 |
200 ± 0.2 |
200 ± 0.2 |
200 ± 0.2 |
| Type / Dopant |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
| Orientation |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
| Growth Method |
Cz |
Cz |
Cz |
Cz |
Cz |
Cz |
| Grade |
|
|
|
|
|
Epi |
| Resistivity |
10 - 30 Ω-cm |
10 - 20 Ω-cm |
1 - 100 Ω-cm |
1 - 50 Ω-cm |
0.005 - 0.02 Ω-cm |
Customer Specified |
| Metals |
< 5xE9 |
< 5xE10 |
< 5xE10 |
|
< 5xE9 |
|
| Thickness |
700 - 750μm |
710 - 740μm |
700 - 750μm |
700 - 750μm |
700 - 750μm |
700 - 750μm |
| Epi Layer Thickness |
|
|
|
|
|
Customer Specified |
| TTV |
< 3μm |
<= 6μm |
<= 4μm |
<= 10μm |
<= 5μm |
<= 10μm |
| GTIR |
< 5μm |
|
|
|
<= 5μm |
|
| Bow / Warp |
< 40μm |
< 40μm |
< 40μm |
< 50μm |
< 40μm |
< 40μm |
| Site Flatness (STIR) |
< 1μm |
< 2μm |
< 0.2μm |
|
< 1μm |
|
| Front Surface |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
| Back Surface |
Etched |
Etched |
Etched |
Etched |
Etched |
Etched or Oxide Back Seal |
| Particle Count |
<= 50 @ >= 0.12μm |
<= 50 @ >= 0.16μm |
<= 50 @ >= 0.16μm |
<= 30 @ >= 0.2μm |
<= 50 @ >= 0.16μm |
|
| Flats |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
| Edges |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Rounded and polished per SEMI Standard |
Диаметр 300 ± 0.5 мм
| Diameter |
300 ± 0.5 mm |
300 ± 0.5 mm |
300 ± 0.5 mm |
300 ± 0.5 mm |
300 ± 0.5 mm |
300 ± 0.5 mm |
P+ 300 ± 0.5 mm |
P+ 300 ± 0.5 mm |
P+ 300 ± 0.5 mm |
| Type / Dopant |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
P/Boron |
| Orientation |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
<100> ± 1° |
| Growth Method |
Cz |
Cz |
Cz |
Cz |
Cz |
Cz |
Cz |
Cz |
Cz |
| Resistivity |
1 - 30 Ω-cm |
1 - 30 Ω-cm |
1 - 30 Ω-cm |
1 - 100 Ω-cm |
1 - 100 Ω-cm |
1 - 100 Ω-cm |
0.005 - 0.02 Ω-cm |
0.005 - 0.02 Ω-cm |
0.005 - 0.02 Ω-cm |
| Radial Resistivity Gradient (RRG) |
<= 10% |
<= 10% |
|
|
|
|
|
|
|
| Oxygen Concentration |
<= 30 ppma |
<= 30 ppma |
|
|
|
|
|
|
|
| Carbon Concentration |
<= 1 ppma |
<= 1 ppma |
|
|
|
|
|
|
|
| Surface Metals |
<= 1xE10 |
<= 1xE10 |
|
|
|
|
|
|
|
| Thickness |
750 - 800μm |
750 - 800μm |
750 - 800μm |
750 - 800μm |
750 - 800μm |
750 - 800μm |
750 - 800μm |
750 - 800μ |
750 - 800μm |
| TTV |
< 2μm |
<= 2μm |
<= 2μm |
<= 2μm |
|
<= 2μm |
<= 2μm |
<= 2μm |
|
| GTIR |
< 5μm |
<= 5μm |
|
|
|
|
|
|
|
| Site Flatness (STIR) |
< 0.25μm |
< 0.25μm |
|
<= 0.13μm |
|
|
|
|
|
| Bow / Warp |
< 40μm |
< 40μm |
|
< 40μm |
|
|
|
|
|
| Front Surface |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
| Back Surface |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
Polished |
| Particle Count |
<= 50 @ >= 0.09μm |
<= 50 @ >= 0.12μm |
<= 50 @ >= 0.16μm |
<= 30 @ >= 0.2μm |
|
<= 100 @ >= 0.2μm |
<= 50 @ >= 0.12μm |
<= 50 @ >= 0.16μm |
<= 200 @ >= 0.2μm |
| Notch |
|
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
SEMI Standard |
|